2N3906 Power Transistor

2N3906 PNP Transistor
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2N3906 Power Transistor Specification


  • Type : Bi-polar PNP transistor
  • Collector emitter maximum voltage:40V
  • Emitter base maximum voltage: 5V
  • Collector base maximum voltage: 40V
  • Continuous collector current: 200mA
  • Junction operating temperature range: -55 to 150C0
  • Minimum forward current transfer ratio: 100
  • Transition frequency:250MHz
  • Maximum collector current: 200mA
  • Collector Capacitance: 5pF
  • Maximum power dissipation: 250mW
  • Storage temperature range: -55 to 150C0
  • Collector emitter saturation voltage: 0.25V
  • Dc Current gain:60
  • Type : Bi-polar PNP transistor
  • Collector emitter maximum voltage:40V
  • Emitter base maximum voltage: 5V
  • Collector base maximum voltage: 40V
  • Continuous collector current: 200mA
  • Junction operating temperature range: -55 to 150C0
  • Minimum forward current transfer ratio: 100
  • Transition frequency:250MHz
  • Maximum collector current: 200mA
  • Collector Capacitance: 5pF
  • Maximum power dissipation: 250mW
  • Storage temperature range: -55 to 150C0
  • Collector emitter saturation voltage: 0.25V
  • Dc Current gain:60 



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